Preparation of Tantalum Oxide Thin Films Using 172nm Excimer UV Light Source

A new method for preparing tantalum oxide thin films using a novel Excimer UV light source is reported. After spin-coating a sol-gel solution on a single crystal silicon substrate, irradiated by a 172 nm UV light source, tantalum oxide can be prepared at low temperature The properties of the thin films were analyzed by ellipsometer, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and other analytical methods. The results show that the atomic ratio of the prepared tantalum oxide thin films is O/Ta It is between 2.4 and 2.6, which is equivalent to 2.5 of the stoichiometric compound Ta_2O_5. The high-frequency C-V curve of the MOS capacitor made with this film shows that the film has good electrical properties.